Inverse Class-F Power Amplifiers – Efficient Improving Instrument of Radio Transmitter Energy Characteristics
نویسندگان
چکیده
منابع مشابه
Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...
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Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...
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—In this paper, analysis and synthesis approach for two new variants within the Class-EF power amplifier (PA) family is elaborated. These amplifiers are classified here as Class-amplifier topologies developed in this paper simultaneously satisfy the Class-EF optimum impedance requirements at fundamental frequency, second, and third harmonics as well as simultaneously providing matching to the c...
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ژورنال
عنوان ژورنال: Bulletin of the South Ural State University. Ser. Computer Technologies, Automatic Control & Radioelectronics
سال: 2018
ISSN: 1991-976X,2409-6571
DOI: 10.14529/ctcr180109